型号:

BSH114,215

RoHS:无铅 / 符合
制造商:NXP Semiconductors描述:MOSFET N-CH 100V 500MA SOT23
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
BSH114,215 PDF
标准包装 1
系列 TrenchMOS™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 100V
电流 - 连续漏极(Id) @ 25° C 500mA
开态Rds(最大)@ Id, Vgs @ 25° C 500 毫欧 @ 500mA,10V
Id 时的 Vgs(th)(最大) 4V @ 1mA
闸电荷(Qg) @ Vgs 4.6nC @ 10V
输入电容 (Ciss) @ Vds 138pF @ 25V
功率 - 最大 360mW
安装类型 表面贴装
封装/外壳 TO-236-3,SC-59,SOT-23-3
供应商设备封装 TO-236AB
包装 标准包装
其它名称 568-8025-6
相关参数
RJK1052DPB-00#J5 Renesas Electronics America MOSFET N-CH 100V 20A LFPAK
TL-N7MD1 Omron Electronics Inc-IA Div PROXIMITY RECT 7MM NPN NO UNSHLD
ANTAP281M4IB - TRAY Dynastream Innovations Inc MOD RF ANT NRF24AP2-8CH
LP-56-850 Signal Transformer XFRMR 115/230V 28V 1.7A 48VA PCB
TL-N5ME1 5M Omron Electronics Inc-IA Div PROXIMITY RECT 5MM NPN NO UNSHLD
AML51-N50RR Honeywell Sensing and Control AML51 BUTTON FOR SWES/INDICATORS
RJK0852DPB-00#J5 Renesas Electronics America MOSFET N-CH 80V 30A LFPAK
ACPM-7881-TR1 Avago Technologies US Inc. IC PWR AMP W-CDMA 2100MHZ 4X4MM
AML51-N50RY Honeywell Sensing and Control AML51 BUTTON FOR SWES/INDICATORS
BV030-7156.0 Pulse Electronics Corporation TRANSFORMER 115V 2X9V 1.5VA
8432090000 Weidmuller CONDITIONER SGNL 3WIRE 0-10V
ANTC782M4IB-TRAY Dynastream Innovations Inc C7 TXRX 8CH MODULE 2.4GHZ
STB2N62K3 STMicroelectronics MOSFET N-CH 620V 2.2A D2PAK
MSA-0436-TR1G Avago Technologies US Inc. AMP MMIC SI BIPOLAR 36MICRO-X
RJK0852DPB-00#J5 Renesas Electronics America MOSFET N-CH 80V 30A LFPAK
8432150000 Weidmuller CONDITIONER SGNL 3WIRE 4-20MA
7W-4.000MBB-T TXC CORPORATION OSC 4.000 MHZ 3.3V SMD
BSH114,215 NXP Semiconductors MOSFET N-CH 100V 500MA SOT23
MNZB-24-B0 MeshNetics MOD 802.15.4/ZIGB 2.4GHZ RF PORT
7W-10.000MBB-T TXC CORPORATION OSC 10.000 MHZ 3.3V SMD